Please use this identifier to cite or link to this item:
https://elib.vku.udn.vn/handle/123456789/1547
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DC Field | Value | Language |
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dc.contributor.author | Tran, Van Dai | - |
dc.contributor.author | Park, Dong-Joo | - |
dc.date.accessioned | 2021-07-23T09:25:02Z | - |
dc.date.available | 2021-07-23T09:25:02Z | - |
dc.date.issued | 2020-08 | - |
dc.identifier.issn | 2277-8616 | - |
dc.identifier.uri | http://elib.vku.udn.vn/handle/123456789/1547 | - |
dc.description | International Journal of Scientific & Technology Research; Vol 9. Issue 8; pp. 422-426. | vi_VN |
dc.description.abstract | Flash memory has been built upon EEPROM (Electronically Erasable Programmable Read-Only Memory). Unlike traditional magnetic disks, Flash memory has disadvantages, like the limitations of life cycle and erase-before-write, which require a resolution well-known namely Flash Translation Layer (FTL) to resolve. Volatile memory today is used to save periodic retrieve requests for mapping-tables in flash memory. These tables can be missed when an unexpected power outage occurs. In order to address this problem, Page-mapping, Block- mapping, and Hybrid-mapping methods have been introduced. However, these methods also have shortcomings, for example, the mapping-information management overhead and the recovery time. In this paper, we introduce a data recovery scheme improves on Hybrid-mapping together with the spare area separate to ECC (Error Code Correction), block information, ASN (Allocation Sequence Number), mapping-information, Flag, and reserved in FTL. The results display that our technique has the less recovery time and mapping-information management overhead than the previous methods. | vi_VN |
dc.language.iso | en | vi_VN |
dc.publisher | International Journal of Scientific & Technology Research | vi_VN |
dc.subject | NAND Flash memory | vi_VN |
dc.subject | Data recovery technique | vi_VN |
dc.subject | ECC | vi_VN |
dc.subject | Power Loss Recovery | vi_VN |
dc.subject | Spare area | vi_VN |
dc.title | A Data Recovery Technique Improves on Hybrid Mapping for NAND Flash Memory | vi_VN |
dc.type | Article | vi_VN |
Appears in Collections: | NĂM 2020 |
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