Please use this identifier to cite or link to this item: https://elib.vku.udn.vn/handle/123456789/1866
Title: Effects of High-Energy Electron Irradiation on the InGaP/GaAs Heterojunction Photosensor
Authors: Than, Hong Phuc
Huynh, Thanh Tung
Than, Quang Tho
Duong, Huu Ai
Nguyen, Vu Anh Quang
Keywords: Heterojunction phototransistor (HPT)
InGaP/GaAs
GaAs solar cell
energy harvesting
Issue Date: 2021
Publisher: Da Nang Publishing House
Abstract: The InGaP/GaAs heterojunction phototransistor (HPT) and GaAs solar cell were monolithically integrated on an HPT epitaxial wafer, and the batteryfree operation of the photosensor was successfully demonstrated for energy harvesting and its measured electrical characteristics are consistent with simulation results. Radiation hardness of the energy-harvesting InGaP/GaAs HPT, which was confirmed after the high-energy electron irradiation, guarantees its space application.
Description: The 10th Conference on Information Technology and its Applications; Topic: Network and Communications; pp. 451-459.
URI: http://elib.vku.udn.vn/handle/123456789/1866
ISBN: 978-604-84-5998-7
Appears in Collections:CITA 2021

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