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https://elib.vku.udn.vn/handle/123456789/2164
Title: | Effects of Insulator Dielectric Passivation Layer on the Breakdown Voltage of AlGaN/GaN High Electron Mobility Transistor |
Authors: | Than, Hong Phuc Tran, Thi Tra Vinh Nguyen, Vu Anh Quang Than, Quang Tho Huynh, Thanh Tung Nguyen, Tan Hung Nguyen, Van Trung Hoang, Van Phuc Hoang, Trong Thuc Pham, Cong Kha |
Keywords: | high electron mobility transistor (HEMT) AlGa/GaN field plate insulator dielectric passivation layer |
Issue Date: | Aug-2021 |
Publisher: | Publish House for Science and Technology |
Citation: | https://iwamsn.ac.vn/proceedings-book-final/ |
Abstract: | Although AIGaN/GaN high electron mobility transistor (HEMT) has been attracted great attention due to its wide bandgap energy of 3.4 eV, high breakdown electric field of 3 MV/em, superior thermal properties, and high electron mobility, very little was repored for the effect of insulator dielectric passivation layer on the breakdown voltage (Vtr) of AIGaN/GaN HEMT. In this paper, we discuss the effect of SiO2;, SiN, Al2O3, HfO2 as an insulator dielectric passivation layer on Vbr AlGaN/GaN FP-HEMIT. The investigation of HEMT was carried out using Technology Computer Aided Design (TCAD). The HEMT with a field plate (FP-HEMT) has a higher Vbr than that of HEMT without a field plate (N-HEMT). The FP-HEMT with HfO2 passivation layer exhibits the highest breakdown vollage of 880 V, The FP-HEMT with SiO2 passivation layer has the lowest breakdown voltage of 175 V. The use of a passivation layer with higher insulator dielectric constant increases the breakdown voltage of HEMT. It is concluded that the AIGaN/GaN HEMT with field plate and passivation layer showed improved performance and reliability. |
Description: | 10th International Workshop on Advanced Materials Science and Nanotechnology (IWAMSN); pp: 30-33 |
URI: | http://elib.vku.udn.vn/handle/123456789/2164 |
ISBN: | 978-604-9988-24-0 |
Appears in Collections: | NĂM 2021 |
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