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DC Field | Value | Language |
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dc.contributor.author | Than, Hong Phuc | - |
dc.contributor.author | Nguyen, Thi Huyen Trang | - |
dc.contributor.author | Tran, Thi Tra Vinh | - |
dc.contributor.author | Nguyen, Vu Anh Quang | - |
dc.contributor.author | Huynh, Thanh Tung | - |
dc.contributor.author | Hoang, Trong Thuc | - |
dc.contributor.author | Nguyen, Thanh Son | - |
dc.date.accessioned | 2022-08-17T03:28:05Z | - |
dc.date.available | 2022-08-17T03:28:05Z | - |
dc.date.issued | 2022-07 | - |
dc.identifier.issn | 978-604-84-6711-1 | - |
dc.identifier.uri | http://elib.vku.udn.vn/handle/123456789/2326 | - |
dc.description | The 11th Conference on Information Technology and its Applications; Topic: Network and Communications; pp.554-558. | vi_VN |
dc.description.abstract | Although AlGaN/GaN high electron mobility transistors (HEMTs) have been attracted great attention due to its wide bandgap energy of 3.4 eV, high breakdown electric field of 3 MV/cm, superior thermal properties, and high electron mobility, few or no reports on the effect of insulator dielectric passivation layer on the breakdown voltage (Vbr) of AlGaN/GaN HEMTs have been published. In this paper, we discuss the effect of Al2O3 as an insulator dielectric passivation layer on Vbr of AlGaN/GaN HEMT. The breakdown voltage Vbr of the HEMT with a field plate (FP-HEMT) is higher than that of HEMT without a field plate (N-HEMT). The FP-HEMT with Al2O3 passivation layer exhibits the higher breakdown voltage of 860 V. It is concluded that the AlGaN/GaN HEMT with field plate and passivation layer showed improved performance and reliability. | vi_VN |
dc.language.iso | en | vi_VN |
dc.publisher | Da Nang Publishing House | vi_VN |
dc.subject | High Electron Mobility Transistor (HEMT) | vi_VN |
dc.subject | AlGaN/GaN | vi_VN |
dc.subject | Field Plate | vi_VN |
dc.subject | Insulator Dielectric Passivation Layer | vi_VN |
dc.title | Improved AlGaN/GaN HEMT Performance by Using Field Plate and Passivation Layer | vi_VN |
dc.type | Working Paper | vi_VN |
Appears in Collections: | CITA 2022 |
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