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https://elib.vku.udn.vn/handle/123456789/2326
Nhan đề: | Improved AlGaN/GaN HEMT Performance by Using Field Plate and Passivation Layer |
Tác giả: | Than, Hong Phuc Nguyen, Thi Huyen Trang Tran, Thi Tra Vinh Nguyen, Vu Anh Quang Huynh, Thanh Tung Hoang, Trong Thuc Nguyen, Thanh Son |
Từ khoá: | High Electron Mobility Transistor (HEMT) AlGaN/GaN Field Plate Insulator Dielectric Passivation Layer |
Năm xuất bản: | thá-2022 |
Nhà xuất bản: | Da Nang Publishing House |
Tóm tắt: | Although AlGaN/GaN high electron mobility transistors (HEMTs) have been attracted great attention due to its wide bandgap energy of 3.4 eV, high breakdown electric field of 3 MV/cm, superior thermal properties, and high electron mobility, few or no reports on the effect of insulator dielectric passivation layer on the breakdown voltage (Vbr) of AlGaN/GaN HEMTs have been published. In this paper, we discuss the effect of Al2O3 as an insulator dielectric passivation layer on Vbr of AlGaN/GaN HEMT. The breakdown voltage Vbr of the HEMT with a field plate (FP-HEMT) is higher than that of HEMT without a field plate (N-HEMT). The FP-HEMT with Al2O3 passivation layer exhibits the higher breakdown voltage of 860 V. It is concluded that the AlGaN/GaN HEMT with field plate and passivation layer showed improved performance and reliability. |
Mô tả: | The 11th Conference on Information Technology and its Applications; Topic: Network and Communications; pp.554-558. |
Định danh: | http://elib.vku.udn.vn/handle/123456789/2326 |
ISSN: | 978-604-84-6711-1 |
Bộ sưu tập: | CITA 2022 |
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