Page 231 - Kỷ yếu hội thảo khoa học lần thứ 12 - Công nghệ thông tin và Ứng dụng trong các lĩnh vực (CITA 2023)
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VanPhi Ho, VanDai Tran, KimTrong Le                                             215


                     crash, the backed up data in the buffer is read back. BBS could minimize the risk of
                     losing data.
                       The experimental results indicate that BBS scheme achieves a good performance
                     and improves the reliability.
                       The rest of this paper is organized as follows: Section 2 reviews basic knowledge of
                     flash memory, FRAM and SQLite. Next, the design of  BBS  and its operations  are

                     finally, Section 5 concludes the paper.



                     2     Background and related works


                     Flash memory is a type of nonvolatile storage device that is widely used nowadays.
                     Unlike a hard disk, flash memory consists of a number of NAND flash memory arrays,

                                                 r of pages. A page is the smallest unit of read and write
                     operations  while  the  block  is  the  smallest  unit  of  erase  operations.  Flash  memory
                     supports three basic operations: read, write and erase. Read operation is the fastest one
                     among these operations, which is about 10 times faster than a write operation. The erase
                     operation is very time-consuming in which a per-block-erase-time usually takes about
                     2ms, which is over 10 times higher than a write operation. Also, as mentioned above,
                     the main drawback characteristic of NAND flash memory is that it has erase-before-
                     write architecture. The erase-before-write feature leads to merge operations [5] which
                     generate  a  lot  of  reading  operations,  writing  operations  and  1  deleting  operation.
                     Moreover, the number of erase cycles for a block is limited to about 100,000 times.
                     Therefore,  frequent  erasing  of  some  particular  locations  may  deteriorate  both  the
                     overall performance and lifetime of the flash memory. Since flash memory has these
                     distinct  characteristics,  it  requires  an  intermediate  software  layer  called  Flash
                     Translation  Layer  (FTL)  for  managing  and  controlling  data  by  which  the  overall
                     performance of flash memory can be enhanced. FTL has been proposed to quickly
                     deploy disk-based applications without any modifications. It achieves this by providing
                     several functions such as logical to physical address mapping, power-off recovery, and
                     wear-leveling.
                       FRAM[4] stands for Ferroelectric Random Access Memory. (Note there are other
                     acronyms  for  FRAM  used  by  other  companies  such  as  FeRAM  or  F-RAM.)  As
                     the "RAM" part of the name already suggests, FRAM behaves similarly to DRAM. It
                     allows random access to each individual bit for both read and write. Unlike EEPROM
                     or Flash memory technology, FRAM does not need a special sequence to write data nor
                     does not require a higher programming voltage. But FRAM is non-volatile; that is, it
                     does  not  "lose"  its  content  when  power  is  removed.  This  is  because  of  the  special
                     dielectric material used in the storage capacitor: a ceramic that allows making use of
                     the  so-called  ferroelectric  effect.  The  term  "ferroelectric"  does  not  mean  that  the
                     memory contains iron (the chemical element Fe) nor does it imply that the memory
                     can  be  influenced by  magnetic  fields.  In  fact  it  is  immune  to  magnetic  fields.  The
                     differences  and  advantages  of  FRAM  versus  some  other  non-volatile  memory





                     ISBN: 978-604-80-8083-9                                                  CITA 2023
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