Page 231 - Kỷ yếu hội thảo khoa học lần thứ 12 - Công nghệ thông tin và Ứng dụng trong các lĩnh vực (CITA 2023)

VanPhi Ho, VanDai Tran, KimTrong Le 215

crash, the backed up data in the buffer is read back. BBS could minimize the risk of
losing data.
The experimental results indicate that BBS scheme achieves a good performance
and improves the reliability.
The rest of this paper is organized as follows: Section 2 reviews basic knowledge of
flash memory, FRAM and SQLite. Next, the design of BBS and its operations are

finally, Section 5 concludes the paper.

2 Background and related works

Flash memory is a type of nonvolatile storage device that is widely used nowadays.
Unlike a hard disk, flash memory consists of a number of NAND flash memory arrays,

r of pages. A page is the smallest unit of read and write
operations while the block is the smallest unit of erase operations. Flash memory
supports three basic operations: read, write and erase. Read operation is the fastest one
among these operations, which is about 10 times faster than a write operation. The erase
operation is very time-consuming in which a per-block-erase-time usually takes about
2ms, which is over 10 times higher than a write operation. Also, as mentioned above,
the main drawback characteristic of NAND flash memory is that it has erase-before-
write architecture. The erase-before-write feature leads to merge operations [5] which
generate a lot of reading operations, writing operations and 1 deleting operation.
Moreover, the number of erase cycles for a block is limited to about 100,000 times.
Therefore, frequent erasing of some particular locations may deteriorate both the
overall performance and lifetime of the flash memory. Since flash memory has these
distinct characteristics, it requires an intermediate software layer called Flash
Translation Layer (FTL) for managing and controlling data by which the overall
performance of flash memory can be enhanced. FTL has been proposed to quickly
deploy disk-based applications without any modifications. It achieves this by providing
several functions such as logical to physical address mapping, power-off recovery, and
wear-leveling.
FRAM[4] stands for Ferroelectric Random Access Memory. (Note there are other
acronyms for FRAM used by other companies such as FeRAM or F-RAM.) As
the "RAM" part of the name already suggests, FRAM behaves similarly to DRAM. It
allows random access to each individual bit for both read and write. Unlike EEPROM
or Flash memory technology, FRAM does not need a special sequence to write data nor
does not require a higher programming voltage. But FRAM is non-volatile; that is, it
does not "lose" its content when power is removed. This is because of the special
dielectric material used in the storage capacitor: a ceramic that allows making use of
the so-called ferroelectric effect. The term "ferroelectric" does not mean that the
memory contains iron (the chemical element Fe) nor does it imply that the memory
can be influenced by magnetic fields. In fact it is immune to magnetic fields. The
differences and advantages of FRAM versus some other non-volatile memory

ISBN: 978-604-80-8083-9 CITA 2023