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https://elib.vku.udn.vn/handle/123456789/1866Toàn bộ biểu ghi siêu dữ liệu
| Trường DC | Giá trị | Ngôn ngữ |
|---|---|---|
| dc.contributor.author | Than, Hong Phuc | - |
| dc.contributor.author | Huynh, Thanh Tung | - |
| dc.contributor.author | Than, Quang Tho | - |
| dc.contributor.author | Duong, Huu Ai | - |
| dc.contributor.author | Nguyen, Vu Anh Quang | - |
| dc.date.accessioned | 2021-12-06T09:06:15Z | - |
| dc.date.available | 2021-12-06T09:06:15Z | - |
| dc.date.issued | 2021 | - |
| dc.identifier.isbn | 978-604-84-5998-7 | - |
| dc.identifier.uri | http://elib.vku.udn.vn/handle/123456789/1866 | - |
| dc.description | The 10th Conference on Information Technology and its Applications; Topic: Network and Communications; pp. 451-459. | vi_VN |
| dc.description.abstract | The InGaP/GaAs heterojunction phototransistor (HPT) and GaAs solar cell were monolithically integrated on an HPT epitaxial wafer, and the batteryfree operation of the photosensor was successfully demonstrated for energy harvesting and its measured electrical characteristics are consistent with simulation results. Radiation hardness of the energy-harvesting InGaP/GaAs HPT, which was confirmed after the high-energy electron irradiation, guarantees its space application. | vi_VN |
| dc.language.iso | en | vi_VN |
| dc.publisher | Da Nang Publishing House | vi_VN |
| dc.subject | Heterojunction phototransistor (HPT) | vi_VN |
| dc.subject | InGaP/GaAs | vi_VN |
| dc.subject | GaAs solar cell | vi_VN |
| dc.subject | energy harvesting | vi_VN |
| dc.title | Effects of High-Energy Electron Irradiation on the InGaP/GaAs Heterojunction Photosensor | vi_VN |
| dc.type | Working Paper | vi_VN |
| Bộ sưu tập: | CITA 2021 | |
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